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IGBT - SMPS 600 V, 60 A
HGTG30N60A4
Description The HGTG30N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
Features
• 60 A, 600 V @ TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 30 A • Typical Fall Time: 58 ns at TJ = 125°C • Low Conduction Loss • This is a Pb−Free Device
Applications
• UPS, Welder
www.onsemi.com C
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TO−247−3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K G30N60A4
© Semiconductor Components Industries, LLC, 2005
February, 2020 − Rev.
HGTG30N60A4 Datasheet
