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IGBT - NPT
600 V
HGTG30N60B3
Description The HGTG30N60B3 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features
• 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A • Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free
www.onsemi.com
VCES 1200 V
IC 30 A
C
G
E
E C G
TO−247−3LD CASE 340CK MARKING DIAGRAM
$Y&Z&3&K G30N60B3
© Semiconductor Components Industries, LLC, 2001
March, 2020 − Rev.
HGTG30N60B3 Datasheet
