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HGTG18N120BND Datasheet, ON Semiconductor

HGTG18N120BND igbt equivalent, igbt.

HGTG18N120BND Avg. rating / M : 1.0 rating-12

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HGTG18N120BND Datasheet

Features and benefits


* 26 A, 1200 V, TC = 110°C
* Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
* Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
* Sh.

Application

operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control.

Description

HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control a.

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TAGS

HGTG18N120BND
IGBT
HGTG18N120BN
HGTG10N120BN
HGTG10N120BND
ON Semiconductor

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