FQU2N50B datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
* Low Gate Charge (Typ. 6.0 nC)
* Low Crss (Typ. 4.3 pF)
* Fast Switching
* 100% Avala.

Application

Features
* 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, ID = 0.8 A
* Low Gate Charge (Typ. 6.0 nC)
*.

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.

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