FQU2N60C mosfet equivalent, n-channel mosfet.
* 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A * Low Gate Charge (Typ. 8.5 nC) * Low Crss (Typ. 4.3 pF) * 100% Avalanche Tested * Th.
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