FQU2N100 mosfet equivalent, 1000v n-channel mosfet.
* 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A * Low Gate Charge ( Typ. 12 nC) * Low Crss ( Typ. 5 pF) * 100% Avalanche Tested * RoHS C.
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