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FQPF47P06YDTU, FQPF47P06 Datasheet - ON Semiconductor

FQPF47P06YDTU P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQPF47P06YDTU Features

* 30 A,

* 60 V, RDS(on) = 26 mW (Max.) @ VGS =

* 10 V, ID =

* 15 A

* Low Gate Charge (Typ. 84 nC)

* Low Crss (Typ. 320 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating DATA SHEET www.onsemi.com VDSS

FQPF47P06-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FQPF47P06YDTU, FQPF47P06. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

FQPF47P06YDTU, FQPF47P06

Manufacturer:

ON Semiconductor ↗

File Size:

312.56 KB

Description:

P-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FQPF47P06YDTU, FQPF47P06.
Please refer to the document for exact specifications by model.

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