FQPF45N15V2 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

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* 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche teste.

Application

lowest Rds(on) is required. ® Features
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* 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low .

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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