* -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 175°C Maxim.

S !
*
* G! ▶ ▲
* GD S TO-220F ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt.

P-Channel QFET® MOSFET FQPF47P06 / FQPF47P06YDTU Features
* -30 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-15 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Tempera.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts