FQA24N60 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A
* Low Gate Charge (Typ. 110 nC)
* Low Crss (Typ. 56 pF)
* 100% Avalanche Tested
* T.

Description

This N−Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

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