FQA24N60 mosfet equivalent, n-channel mosfet.
* 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A
* Low Gate Charge (Typ. 110 nC)
* Low Crss (Typ. 56 pF)
* 100% Avalanche Tested
* T.
This N−Channel Enhancement Mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
reduce on−state resistance, and to provide superior switching perfo.
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