FQA28N15 Datasheet | Fairchild Semiconductor

- N-Channel QFET® MOSFET N-Channel QFET® MOSFET 150 V, 33 A, 90 mΩ June 2014 Description Features This N-Channel enhancement mode power MOSFET is - 33 A, 150 V, RDS(on) = 90 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET ID = 16.5 A technology has been especially tailored to reduce on-state - Low Gate Charge (Typ. 0 nC) resistance, and to provide superior switching performance and - Low Crss (Typ. 110 pF) high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor - 100% Avalanche Tested control, and variable switching...