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FQA22P10 Fairchild Semiconductor 100V P-Channel MOSFET

Fairchild Semiconductor
Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications suc...
Features






• -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series TC = 25°C unless otherwise noted S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR d...

Datasheet PDF File FQA22P10 Datasheet 637.22KB

FQA22P10   FQA22P10   FQA22P10  




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