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FGH75T65SHDT Datasheet, ON Semiconductor

FGH75T65SHDT igbt equivalent, igbt.

FGH75T65SHDT Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 2.14MB)

FGH75T65SHDT Datasheet
FGH75T65SHDT
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 2.14MB)

FGH75T65SHDT Datasheet

Features and benefits


* Maximum Junction Temperature: TJ =175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volta.

Application

where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ =175°C
* Po.

Description

Using novel field stop IGBT technology, onsemi’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. F.

Image gallery

FGH75T65SHDT Page 1 FGH75T65SHDT Page 2 FGH75T65SHDT Page 3

TAGS

FGH75T65SHDT
IGBT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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