FGH75T65SHDTL4 datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Maximum Junction Temperature: TJ =175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volta.

Application

where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ =175°C
* Po.

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.

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