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FGH75T65SQD - IGBT

Description

series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature : TJ =175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ. ) @ IC = 75 A.
  • 100% of the Parts Tested for ILM(1).
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, Welder, Telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature : TJ =175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC www.onsemi.
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