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FGH50N3 - SMPS IGBT

Description

for many high voltage switching applications operating at high frequencies where low conduction losses are essential.

This device has been optimized for medium frequency switch mode power supplies.

Features

  • Low Saturation Voltage: VCE(sat) = 1.4 V Max.
  • Low EOFF = 6.6 uJ/A.
  • SCWT = 8 ms @ = 125°C.
  • 300 V Switching SOA Capability.
  • Positive Temperature Coefficient above 50 A.
  • This is a Pb.
  • Free Device.

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Other Datasheets by ON Semiconductor

Full PDF Text Transcription

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IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor’s planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features • Low Saturation Voltage: VCE(sat) = 1.4 V Max • Low EOFF = 6.6 uJ/A • SCWT = 8 ms @ = 125°C • 300 V Switching SOA Capability • Positive Temperature Coefficient above 50 A • This is a Pb−Free Device Applications • SMPS www.onsemi.com C G E EC G COLLECTOR (FLANGE) TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FGH50N3 © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev.
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