FGH50N3 igbt equivalent, smps igbt.
* Low Saturation Voltage: VCE(sat) = 1.4 V Max
* Low EOFF = 6.6 uJ/A
* SCWT = 8 ms @ = 125°C
* 300 V Switching SOA Capability
* Positive Temperature C.
operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequ.
Using ON Semiconductor’s planar technology, this IGBT is ideal
for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power.
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