FFSD1065B diode equivalent, sic schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .
* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
DATA SHEET www.onsemi.com
1, 3 Cat.
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 394.01KB)