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FFSD08120A Datasheet, ON Semiconductor

FFSD08120A diode equivalent, silicon carbide schottky diode.

FFSD08120A Avg. rating / M : 1.0 rating-12

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FFSD08120A Datasheet

Features and benefits


* Max Junction Temperature 175°C
* Avalanche Rated 80 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

Application


* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www.onsemi.com 1, 2, 4. Cathode 3..

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

Image gallery

FFSD08120A Page 1 FFSD08120A Page 2 FFSD08120A Page 3

TAGS

FFSD08120A
Silicon
Carbide
Schottky
Diode
ON Semiconductor

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