FFSD10120A diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175 °C
* Avalanche Rated 100 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
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* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
Description
Silicon Carbide (SiC) .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
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