logo

FFSB2065BDN-F085 Datasheet, ON Semiconductor

FFSB2065BDN-F085 diode equivalent, silicon carbide schottky diode.

FFSB2065BDN-F085 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 233.66KB)

FFSB2065BDN-F085 Datasheet

Features and benefits


* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

Application


* Automotive BEV−EV
* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters MOSFET MAXIMU.

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

Image gallery

FFSB2065BDN-F085 Page 1 FFSB2065BDN-F085 Page 2 FFSB2065BDN-F085 Page 3

TAGS

FFSB2065BDN-F085
Silicon
Carbide
Schottky
Diode
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts