FFSB20120A-F085 diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.
* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters
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1.,3. Cathode 2. Anode.
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
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