* Max Junction Temperature 175°C
* Avalanche Rated 94 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters ABSOLUTE MAXIMUM RATINGS (TC = 25°C u.

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

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