FDY1002PZ mosfet equivalent, dual p-channel mosfet.
* Max rDS(on) = 0.5 W at VGS =
–4.5 V, ID =
–0.83 A
* Max rDS(on) = 0.7 W at VGS =
–2.5 V, ID =
–0.
where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
This Dual P−Channel .
These P−Channel Logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are .
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