FDY1002PZ - Dual P-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDY1002PZ
Manufacturer	ON Semiconductor ↗
File Size	251.05 KB
Description	Dual P-Channel MOSFET
Datasheet	FDY1002PZ-ONSemiconductor.pdf

FDY1002PZ Product details

Description

These P Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Channel MOSFET has been designed using onsemi’s advanced Power Trench process to

Features

Max rDS(on) = 0.5 W at VGS =.
4.5 V, ID =.
0.83 A.
Max rDS(on) = 0.7 W at VGS =.
2.5 V, ID =.
0.70 A.
Max rDS(on) = 1.2 W at VGS =.
1.8 V, ID =.
0.43 A.
Max rDS(on) = 1.8 W at VGS =.
1.5 V, ID =.
0.36 A.
HBM ESD Protection Level = 1400 V (Note 1).
This Device is Pb.
Free and is RoHS Compliant.

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Published: Feb 5, 2023 |