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FDY100PZ - Single P-Channel Specified PowerTrench MOSFET

General Description

This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =

2.5v.

Key Features

  • 350 mA,.
  • 20 V RDS(ON) = 1.2 Ω @ VGS =.
  • 4.5 V RDS(ON) = 1.6 Ω @ VGS =.
  • 2.5 V.
  • ESD protection diode (note 3).
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com January 2006 FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V RDS(ON) = 1.6 Ω @ VGS = – 2.