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FDY300NZ - Single N-Channel Specified PowerTrench MOSFET

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.

Key Features

  • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.5 V.
  • ESD protection diode (note 3).
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET January 2006 FDY300NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features • 600 mA, 20 V RDS(ON) = 700 mΩ @ VGS = 4.5 V RDS(ON) = 850 mΩ @ VGS = 2.