* -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
* Fast switching speed.
* High density cell design for extremely low RDS(O.

* DC/DC converter
* Power management
* Load switch
* Battery protection Features
* -3.5 A, -20 V. R.

This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching .

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