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FDS9400A - 30V P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

25V).

Key Features

  • 3.4 A,.
  • 30 V RDS(ON) = 130 mΩ @ VGS =.
  • 10 V RDS(ON) = 200 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (2.4nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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FDS9400A December 2001 FDS9400A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –3.4 A, –30 V RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V • Low gate charge (2.