Datasheet4U Logo Datasheet4U.com

FDS9435A - 30V P-Channel Power Trench MOSFET

General Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • -5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S F D 5A 3 94 pin 1 5 6 S G 4 3 2 1 7 8 SO-8 S S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS9435A Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS9435A 30V P-Channel PowerTrench MOSFET ON Semiconductor
FDS9431A P-Channel MOSFET ON Semiconductor
FDS9400A P-Channel 30V MOSFET VBsemi
FDS9400A-NL P-Channel 30V MOSFET VBsemi
FDS9926A Dual N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS9431A P-Channel 2.5V Specified MOSFET
FDS9431A_F085 P-Channel 2.5V Specified MOSFET
FDS9400A 30V P-Channel PowerTrench MOSFET
FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor
FDS9926A Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON).