FDS8817NZ
FDS8817NZ is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, POWERTRENCH)
30 V, 15 A, 7.0 m W
FDS8817NZ, FDS8817NZ-G
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- Max r DS(on) = 7 m W at VGS = 10 V, ID = 15 A
- Max r DS(on) = 10 m W at VGS = 4.5 V, ID = 12.6 A
- HBM ESD Protection Level of 3.8 k V Typical-
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability
- These Devices are Pb- Free and are Ro HS pliant
Specifications
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current
Continuous (Note 1a)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
Power Dissipation
(Note 1a)
(Note 1b)
181 m...
