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FDS8817NZ Datasheet, ON Semiconductor

FDS8817NZ mosfet equivalent, n-channel mosfet.

FDS8817NZ Avg. rating / M : 1.0 rating-11

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FDS8817NZ Datasheet

Features and benefits


* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A
* HBM ESD Protection Level of 3.8 kV Typical*
* High Perfo.

Application

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A
.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Co.

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TAGS

FDS8817NZ
N-Channel
MOSFET
FDS8812NZ
FDS8813NZ
FDS8840NZ
ON Semiconductor

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