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FDS6676AS-G, FDS6676AS Datasheet - ON Semiconductor

FDS6676AS-G N-Channel MOSFET

The FDS6676AS is designed to replace a single SO *8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsem.

FDS6676AS-G Features

* 14.5 A, 30 V

* RDS(ON) Max = 6.0 mW at VGS = 10 V

* RDS(ON) Max = 7.25 mW at VGS = 4.5 V

* Includes SyncFET Schottky Body Diode

* Low Gate Charge (45 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching

FDS6676AS-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FDS6676AS-G, FDS6676AS. Please refer to the document for exact specifications by model.
FDS6676AS-G Datasheet Preview Page 2 FDS6676AS-G Datasheet Preview Page 3

Datasheet Details

Part number:

FDS6676AS-G, FDS6676AS

Manufacturer:

ON Semiconductor ↗

File Size:

263.76 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FDS6676AS-G, FDS6676AS.
Please refer to the document for exact specifications by model.

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TAGS

FDS6676AS-G FDS6676AS N-Channel MOSFET ON Semiconductor

FDS6676AS-G Distributor