FDS6676AS-G mosfet equivalent, n-channel mosfet.
* 14.5 A, 30 V
* RDS(ON) Max = 6.0 mW at VGS = 10 V
* RDS(ON) Max = 7.25 mW at VGS = 4.5 V
* Includes SyncFET Schottky Body Diode
* Low Gate Charge (4.
* DC/DC Converter
* Low Side Notebook
DATA SHEET www.onsemi.com
VDSS MAX 30 V
RDS(on) MAX 6.0 mW @ 10 V 7.25 .
The FDS6676AS is designed to replace a single SO−8 MOSFET
and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS include.
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