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FDS6673BZ Datasheet, ON Semiconductor

FDS6673BZ mosfet equivalent, p-channel mosfet.

FDS6673BZ Avg. rating / M : 1.0 rating-11

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FDS6673BZ Datasheet

Features and benefits


* Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A
* Max RDS(on) = 12 mW @ VGS = −4.5 V, ID = −12 A
* Extended VGS Range (−25 V) for Battery Applications
.

Application

common in Notebook Computers and Portable Battery Packs. Features
* Max RDS(on) = 7.8 mW @ VGS = −10 V, ID = −14.5 A.

Description

This P−Channel MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook C.

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TAGS

FDS6673BZ
P-Channel
MOSFET
ON Semiconductor

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