FDS6612A mosfet equivalent, n-channel mosfet.
* 8.4 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technolo.
where low in-line power loss and fast switching are required.
Features
* 8.4 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 .
This N-Channel Logic Level MOSFET is
produced using
ON
Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well .
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