Datasheet4U Logo Datasheet4U.com

FDS6612A - PowerTrench MOSFET

Description

superior switching performance.

Features

  • 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V.
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Not.

📥 Download Datasheet

Datasheet preview – FDS6612A

📁 Similar Datasheet

  • FDS6612A - N-Channel MOSFET (ON Semiconductor)
  • FDS6673BZ - P-Channel MOSFET (ON Semiconductor)
  • FDS6673BZ-F085 - P-Channel MOSFET (ON Semiconductor)
  • FDS6675 - P-Channel MOSFET (ON Semiconductor)
  • FDS6675BZ - P-Channel MOSFET (On Semiconductor)
  • FDS6676AS - N-Channel MOSFET (ON Semiconductor)
  • FDS6676AS-G - N-Channel MOSFET (ON Semiconductor)
  • FDS6679AZ - P-Channel MOSFET (ON Semiconductor)
  • FDS6680A - N-Channel MOSFET (ON Semiconductor)
  • FDS6681Z - 30V P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS6612A Single N-Channel, Logic-Level, PowerTrench® MOSFET FDS6612A Single N-Channel, Logic-Level, PowerTrench® MOSFET April 2007 tm General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.
Published: |