Datasheet4U Logo Datasheet4U.com

FDS6570A - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V.
  • Low gate charge (47nC typical). These devices are well suited for low voltage and battery powered.

📥 Download Datasheet

Datasheet preview – FDS6570A

Datasheet Details

Part number FDS6570A
Manufacturer ON Semiconductor
File Size 195.95 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6570A Datasheet
Additional preview pages of the FDS6570A datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FDS6570A FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V. • Low gate charge (47nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Battery protection • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability.
Published: |