FDS3572 mosfet equivalent, n-channel mosfet.
* RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A
* Qg(tot) = 31 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low QRR Body Diode
* Optimized Efficiency a.
* Primary Switch for Isolated DC−DC Converters
* Distributed Power and Intermediate Bus Architectures
* High.
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