FDS3572 N-Channel MOSFET
• RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A
• Qg(tot) = 31 nC (Typ.), VGS = 10 V
• Low Miller Charge
• Low QRR Body Diode
• Optimized Efficiency a.
• Primary Switch for Isolated DC−DC Converters
• Distributed Power and Intermediate Bus Architectures
• High.
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