FDS3512
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V
- Low gate charge (13nC Typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability D D D D 5 6 7 4 3 2 1 SO-8 S S S G
