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Fairchild Semiconductor Electronic Components Datasheet

FDS3512 Datasheet

80V N-Channel PowerTrench MOSFET

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May 2001
FDS3512
80V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
4.0 A, 80 V
RDS(ON) = 70 m@ VGS = 10 V
RDS(ON) = 80 m@ VGS = 6 V
Low gate charge (13nC Typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3512
FDS3512
13’’
54
63
72
81
Ratings
80
±20
4.0
30
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)


Fairchild Semiconductor Electronic Components Datasheet

FDS3512 Datasheet

80V N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V, ID = 4.0 A
IAR Maximum Drain-Source
Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 64 V, VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
90 mJ
4.0 A
80
80
V
mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)n
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
GFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
2 2.4 4
V
–6 mV/°C
VGS = 10 V, ID = 4.0 A
50 70 m
VGS = 6 V, ID = 3.7A
55 80
VGS = 10 V, ID = 4.0 A, TJ = 125°C
91 135
VGS = 10 V, VDS = 5 V
20
A
VGS = 10 V, ID = 4.0 A
14 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 40 V, V GS = 0 V,
f = 1.0 MHz
634 pF
58 pF
28 pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 40 V, ID = 4.0 A,
VGS = 10 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
(Note 2)
Voltage
7 14
36
24 38
48
13 18
2.4
2.8
ns
ns
ns
ns
nC
nC
nC
2.1
0.8 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 105 °C/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125 °C/W when mounted on a
minimum pad.
FDS3512 Rev B1 (W)


Part Number FDS3512
Description 80V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 5 Pages
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