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Fairchild Semiconductor Electronic Components Datasheet

FDS3580 Datasheet

80V N-Channel PowerTrenchTM MOSFET

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April 1999
PRELIMINARY
FDS3580
80V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
7.6 A, 80 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.031 @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
(Note 1c)
Operating and Storage Junction Temperature Range
5
6
7
8
Ratings
80
±20
7.6
50
2.5
1.2
1
-55 to +150
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS3580
FDS3580
13’’
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©1999 Fairchild Semiconductor Corporation
FDS3580 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

FDS3580 Datasheet

80V N-Channel PowerTrenchTM MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 64 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
80
V
81 mV/°C
1
100
-100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2 2.5 4
V
ID = 250 µA, Referenced to 25°C -7 mV/°C
VGS = 10 V, ID = 7.6 A
0.022 0.027
VGS = 10 V, ID = 7.6 A, TJ=125°C
0.037 0.055
VGS = 6 V, ID = 7 A
0.024 0.031
VGS = 10 V, VDS = 5 V
30
VDS = 5 V, ID = 7.6 A
28
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1800
180
90
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 2)
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 40 V, ID = 7.6 A,
VGS = 10 V
13 26
8 20
34 60
16 30
34 46
6.1
6.9
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
2.1 A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
0.74 1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDS3580 Rev. B


Part Number FDS3580
Description 80V N-Channel PowerTrenchTM MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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