*
  –2.6 A,
  –12 V RDS(on) = 40 mW @ VGS =
  –4.5 V RDS(on) = 50 mW @ VGS =
  –2.5 V RDS(on) = 80 mW @ VGS = .

Features
*
  –2.6 A,
  –12 V RDS(on) = 40 mW @ VGS =
  –4.5 V RDS(on) = 5.

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
*
  –2.6 A,
  –12 V RDS(on) = 40 mW @ VGS =
&n.

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