FDN304P Datasheet, ON Semiconductor

* −2.4 A, −20 V
* RDS(ON) = 52 mW @ VGS = −4.5 V
* RDS(ON) = 70 mW @ VGS = −2.5 V
* RDS(ON) = 100 mW @ VGS = −1.8 V
* Fast Switching Speed
* High .

Features
* −2.4 A, −20 V
* RDS(ON) = 52 mW @ VGS = −4.5 V
* RDS(ON) = 70 mW @ VGS = −2.5 V
* RDS(ON) = .

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −2.4 A, −20 V
* RDS(ON) = 52 mW @ VGS = −4.5 V
* RDS(ON) = 70 mW @ V.

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