FDN302P Description
This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V).
FDN302P Key Features
- 20 V, -2.4 A RDS(ON) = 0.055 W @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-3 Provides Low RDS(ON) and 30% Higher Power
- This is a Pb-Free and Halide Free Device