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FDN302P ON Semiconductor

FDN302P P-Channel MOSFET

FDN302P Avg. rating / M : star-17

datasheet Download

FDN302P Datasheet

Features and benefits


• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V
• Fast Switching Speed
• High Performance Trench Technology for Extremely Lo.

Application

with a wide range of gate drive voltage (2.5 V − 12 V). Features
• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RD.

Image gallery

FDN302P FDN302P FDN302P

TAGS
FDN302P
P-Channel
MOSFET
FDN304P
FDN304PZ
FDN306P
ON Semiconductor
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