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FDN302P Datasheet P-Channel MOSFET

Manufacturer: onsemi

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General Description

This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V).

Overview

MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General.

Key Features

  • 20 V,.
  • 2.4 A RDS(ON) = 0.055 W @ VGS =.
  • 4.5 V RDS(ON) = 0.080 W @ VGS =.
  • 2.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
  • 23 in the Same Footprint.
  • This is a Pb.
  • Free and Halide Free Device.

📁 Similar Datasheet

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Fairchild Semiconductor Logo FDN302P P-Channel MOSFET Fairchild Semiconductor
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