FDN302P ON Semiconductor

• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V
• Fast Switching Speed
• High Performance Trench Technology for Extremely Lo.

with a wide range of gate drive voltage (2.5 V − 12 V). Features
• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RD.