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FDN302P Datasheet, ON Semiconductor

FDN302P mosfet equivalent, p-channel mosfet.

FDN302P Avg. rating / M : 1.0 rating-14

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FDN302P Datasheet

Features and benefits


* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Lo.

Application

with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RD.

Description

This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RD.

Image gallery

FDN302P Page 1 FDN302P Page 2 FDN302P Page 3

TAGS

FDN302P
P-Channel
MOSFET
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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