FDN302P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RDS(ON) = 0.080 W @ VGS = −2.5 V
* Fast Switching Speed
* High Performance Trench Technology for Extremely Lo.

Application

with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V RD.

Description

This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V − 12 V). Features
* −20 V, −2.4 A RD.

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