FDN302P P-Channel MOSFET
• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V
RDS(ON) = 0.080 W @ VGS = −2.5 V
• Fast Switching Speed
• High Performance Trench Technology for Extremely Lo.
with a wide range of gate drive voltage (2.5 V − 12 V).
Features
• −20 V, −2.4 A RDS(ON) = 0.055 W @ VGS = −4.5 V
RD.
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