FDMS86181 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A
* Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A
* ADD
* 50% lower Qrr .

Application

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar MAXIMUM RATINGS.

Description

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in.

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