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FDMS86181 - N-Channel MOSFET

Description

This N

advanced POWERTRENCH® process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 12 mW at VGS = 6 V, ID = 22 A.
  • ADD.
  • 50% lower Qrr than other MOSFET suppliers.
  • Lowers switching noise/EMI.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant.

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Datasheet Details

Part number FDMS86181
Manufacturer onsemi
File Size 482.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86181 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, Single N-Channel, Shielded Gate, POWERTRENCH) 100 V, 124 A, 4.2 mW FDMS86181 General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 4.
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