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FDMS86181 - N-Channel Shielded Gate PowerTrench MOSFET

General Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A.
  • Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A.
  • ADD.
  • 50% lower Qrr than other MOSFET suppliers.
  • Lowers switching noise/EMI.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86181 N-Channel MOSFET ON Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86181 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86181 December 2015 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 124 A, 4.2 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A „ ADD „ 50% lower Qrr than other MOSFET suppliers „ Lowers switching noise/EMI „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.