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FDMS3672 Datasheet, ON Semiconductor

FDMS3672 mosfet equivalent, n-channel mosfet.

FDMS3672 Avg. rating / M : 1.0 rating-13

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FDMS3672 Datasheet

Features and benefits


* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
* Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
* Typ Qg = 31 nC at VGS = 10 V
* Low Miller Charge
* Op.

Application

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features

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FDMS3672 Page 1 FDMS3672 Page 2 FDMS3672 Page 3

TAGS

FDMS3672
N-Channel
MOSFET
FDMS3600AS
FDMS3600S
FDMS3602AS
ON Semiconductor

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