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FDMS3672 - N-Channel UltraFET Trench MOSFET

General Description

Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A Typ Qg = 31nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant tm UItraFET devices combine characteristics that ena

Key Features

  • General.

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FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ Features General Description „ Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A „ Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A „ Typ Qg = 31nC at VGS = 10V „ Low Miller Charge „ Optimized efficiency at high frequencies „ RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application „ DC - DC Conversion Pin 1 S S S G D D www.DataSheet4U.