FDMS3572 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A
* Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A
* Typ Qg = 28 nC at VGS = 10 V
* Low Miller Charge
* .

Application

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features

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