FDMS3500 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 14.5 mW at VGS = 10 V, ID = 11.5 A
* Max RDS(on) = 16.3 mW at VGS = 4.5 V, ID = 10 A
* Advanced Package and Silicon Combination for Low RDS(on.
* DC−DC Conversion
DATA SHEET www.onsemi.com
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S
S
S
Pin G
1
DDDD
Power 56 (PQFN8) CASE 483AE
D5 .
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 14.5 mW at VGS = 10 V, I.
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