FDMS3600S datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
* Max rDS(o.

Application

* Computing
* MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ri.

Description

Q1: N-Channel
* Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
* Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel
* Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
* Low i.

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