FDMS3604AS
Description
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS pliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
