FDMQ8203 datasheet, mosfet equivalent, ON Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 293.87KB)

Features and benefits

* Q1/Q4: N−Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P−Channel
* Max RDS(on) = 1.

Application

* High−Efficiency Bridge Rectifiers
* Substantial Efficiency Benefit in PD Solutions
* These Device is Pb−Fr.

Description

This quad mosfet solution provides ten−fold improvement in power dissipation over diode bridge. Features
* Q1/Q4: N−Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P−Chan.

Image gallery