FDMQ8203 mosfet equivalent, dual n-channel and dual p-channel powertrench mosfet.
General Description
Q1/Q4: N-Channel
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Q2/Q3: P-Channel
* Max r.
Q1/Q4: N-Channel
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Q2/Q3: P-Channel
* Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
* Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A <.
Image gallery
TAGS
Manufacturer
Related datasheet